这是一个N沟道场效应管，有两种封装形式具体封装及参数看下图。
用什么管子可以代替。谢谢！
追答为什么要找替代品，这个管子很容易买到的啊？？
温馨提示：内容为网友见解，仅供参考
第1个回答 2012-06-20
Symbol Parameter FQD13N10L / FQU13N10L Units
VDSS Drain-Source Voltage 100 V
ID Drain Current - Continuous (TC = 25°C) 10 A
- Continuous (TC = 100°C) 6.3 A
IDM Drain Current - Pulsed (Note 1) 40 A
VGSS Gate-Source Voltage ± 20 V
EAS Single Pulsed Avalanche Energy (Note 2) 95 mJ
IAR Avalanche Current (Note 1) 10 A
EAR Repetitive Avalanche Energy (Note 1) 4.0 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns
PD
Power Dissipation (TA = 25°C) * 2.5 W
Power Dissipation (TC = 25°C) 40 W
- Derate above 25°C 0.32 W/°C
你根据以上参数，查找替代的管子，很多品牌有相同管子。
VDSS Drain-Source Voltage 100 V
ID Drain Current - Continuous (TC = 25°C) 10 A
- Continuous (TC = 100°C) 6.3 A
IDM Drain Current - Pulsed (Note 1) 40 A
VGSS Gate-Source Voltage ± 20 V
EAS Single Pulsed Avalanche Energy (Note 2) 95 mJ
IAR Avalanche Current (Note 1) 10 A
EAR Repetitive Avalanche Energy (Note 1) 4.0 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns
PD
Power Dissipation (TA = 25°C) * 2.5 W
Power Dissipation (TC = 25°C) 40 W
- Derate above 25°C 0.32 W/°C
你根据以上参数，查找替代的管子，很多品牌有相同管子。
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